远离沟道的埋层对GaN HEMT器件导通电阻的影响

洁 许, 徐国 章

摘要


当埋层与沟道距离较远时，器件的低导通特性可以不受影响，因此结合埋层对器件击穿电压的影响，远离沟道的埋层可以使器件获得更高的功率品质因数。

关键词


AlGaN/GaN；p-GaN；特征导通电阻；BFOM

全文:

PDF

参考


Chatterjee I, Uren M J, Karboyan S, et al. Lateral Charge Transport in the Carbon-doped Buffer in AlGaN/GaN-on-Si HEMTs[J]. Ieee Transactions on Electron Devices,2017,64(3):977-983.

Kambayashi H, Satoh Y, Ootomo S, et al. Over 100 Aoperation normally-off AlGaN/GaN hybrid MOS-HFET on Si substrate with high-breakdown voltage[J]. Solid-State Electronics,2010,54(6):660-664.

Kato S, Satoh Y, Sasaki H, et al. C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE[J]. Journal of Crystal Growth,2007,298:831-834.

Uren M J, Caesar M, Karboyan S, et al. Electric Field Reduction in C-doped AlGaN/GaN on Si High Electron Mobility Transistors[J].Ieee Electron Device Letters,2015,36(8):826-828.

Uren M J, Silvestri M, Caesar M, et al. Intentionally Carbon-doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths[J]. Ieee Electron Device Letters,2014,35(3):327-329.




DOI: https://doi.org/10.12346/etr.v4i3.5807

Refbacks

  • 当前没有refback。